VBsemi Elec VBA8338

VBsemi Elec · FETs & Power MOSFETs · MPN VBA8338

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Specifications

Output Capacitance(Coss)180pF
Pd - Power Dissipation4.2W
Configuration-
Drain to Source Voltage30V
Gate Charge(Qg)25nC
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Reverse Transfer Capacitance (Crss@Vds)145pF
RDS(on)18mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.6nF

Technical details

4.2W 30V 1.7V 18mΩ@10V 1 P-Channel P-Channel MSOP-8 Single FETs, MOSFETs RoHS

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