VBsemi Elec VBA5615

VBsemi Elec · FETs & Power MOSFETs · MPN VBA5615

No reviews yet — be the first to review VBsemi Elec VBA5615.

Specifications

Gate Charge(Qg)13.3nC@10V;13nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)745pF;792pF
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V;2.2V;900mV;2.5V
Pd - Power Dissipation3.6W
Reverse Transfer Capacitance (Crss@Vds)214pF
RDS(on)15mΩ@10V;18mΩ@4.5V;17mΩ@10V;22mΩ@4.5V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)1.321nF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel Array 60V 9A 3.6W Surface Mount SO-8

Related FETs & Power MOSFETs