VBsemi Elec VBA4216

VBsemi Elec · FETs & Power MOSFETs · MPN VBA4216

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Specifications

Gate Charge(Qg)34.5nC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)8.9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation2W
RDS(on)18mΩ@4.5V
Number2 P-Channel
TypeP-Channel

Technical details

P-Channel 20V 8.9A 2W Surface Mount SO-8

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