VBsemi Elec · FETs & Power MOSFETs · MPN VBA3316SA
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| Output Capacitance(Coss) | 117pF |
|---|---|
| Pd - Power Dissipation | 2W |
| Configuration | - |
| Drain to Source Voltage | 30V |
| Gate Charge(Qg) | 15nC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Reverse Transfer Capacitance (Crss@Vds) | 55pF |
| RDS(on) | 8mΩ@10V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 586pF |
2W 30V 1V 8mΩ@10V 2 N-Channel N-Channel SOIC-8 Single FETs, MOSFETs RoHS