VBsemi Elec VBA3108N

VBsemi Elec · FETs & Power MOSFETs · MPN VBA3108N

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Specifications

Gate Charge(Qg)9nC@6V
Drain to Source Voltage100V
Output Capacitance(Coss)90pF
Current - Continuous Drain(Id)3.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation3.2W
Reverse Transfer Capacitance (Crss@Vds)50pF
RDS(on)63mΩ@10V;84mΩ@6V
Number1 N-channel
Input Capacitance(Ciss)600pF
TypeN-Channel

Technical details

N-Channel 100V 3.4A 3.2W Surface Mount SO-8

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