VBsemi Elec VBA1310S

VBsemi Elec · FETs & Power MOSFETs · MPN VBA1310S

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Specifications

Gate Charge(Qg)36nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)322pF
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation3.1W
Reverse Transfer Capacitance (Crss@Vds)168pF
RDS(on)11.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.656nF

Technical details

N-Channel 30V 12A 3.1W Surface Mount SOIC-8

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