VBsemi Elec · FETs & Power MOSFETs · MPN VBA1310S
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| Gate Charge(Qg) | 36nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 322pF |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 3.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 168pF |
| RDS(on) | 11.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.656nF |
N-Channel 30V 12A 3.1W Surface Mount SOIC-8