VBsemi Elec · FETs & Power MOSFETs · MPN VBA1208N
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| Gate Charge(Qg) | 34nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 3.35A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 1.56W |
| RDS(on) | 65mΩ@10V;72mΩ@6V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.5nF |
| Type | N-Channel |
N-Channel 200V 3.35A 1.56W Surface Mount SO-8