VBsemi Elec VBA1203M

VBsemi Elec · FETs & Power MOSFETs · MPN VBA1203M

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Specifications

Gate Charge(Qg)34nC@10V
Drain to Source Voltage200V
Output Capacitance(Coss)180pF
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation96W
Reverse Transfer Capacitance (Crss@Vds)80pF
RDS(on)260mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.8nF
TypeN-Channel

Technical details

N-Channel 200V 3A 96W Surface Mount SO-8

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