VBsemi Elec VBA1101N

VBsemi Elec · FETs & Power MOSFETs · MPN VBA1101N

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Specifications

Gate Charge(Qg)451nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)790pF
Current - Continuous Drain(Id)16A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation3.5W
Reverse Transfer Capacitance (Crss@Vds)160pF
RDS(on)9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.41nF
TypeN-Channel

Technical details

N-Channel 100V 16A 3.5W Surface Mount SO-8

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