VBsemi Elec VB8690

VBsemi Elec · FETs & Power MOSFETs · MPN VB8690

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)10nC@10V
Current - Continuous Drain(Id)3.5A
Output Capacitance(Coss)80pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation3W
RDS(on)95mΩ@10V;105mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)63pF
Number1 P-Channel
Input Capacitance(Ciss)950pF
TypeP-Channel

Technical details

60V 3.5A 3V 3W 1 P-Channel P-Channel TSOP-6 Single FETs, MOSFETs RoHS

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