VBsemi Elec VB562K

VBsemi Elec · FETs & Power MOSFETs · MPN VB562K

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Specifications

Gate Charge(Qg)700pC@5V;800pC@5V
Drain to Source Voltage60V
Current - Continuous Drain(Id)800mA;550mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V;1.5V
Pd - Power Dissipation750mW
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)700mΩ@10V;2.06Ω@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)-
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel 60V 800mA 750mW Surface Mount TSOP-6-1.5mm

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