VBsemi Elec · FETs & Power MOSFETs · MPN VB562K
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| Gate Charge(Qg) | 700pC@5V;800pC@5V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 800mA;550mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V;1.5V |
| Pd - Power Dissipation | 750mW |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 700mΩ@10V;2.06Ω@10V |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | - |
| Type | N-Channel + P-Channel |
N-Channel+P-Channel 60V 800mA 750mW Surface Mount TSOP-6-1.5mm