VBsemi Elec VB5460

VBsemi Elec · FETs & Power MOSFETs · MPN VB5460

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Specifications

Gate Charge(Qg)3.6nC@5V
Drain to Source Voltage40V
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation2.15W
RDS(on)80mΩ@4.5V
Number1 N-Channel + 1 P-Channel
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel Array 40V 8A 2.15W Surface Mount TSOP-6

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