VBsemi Elec VB5222

VBsemi Elec · FETs & Power MOSFETs · MPN VB5222

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Specifications

Gate Charge(Qg)3.2nC@5V;3.6nC@10V
Drain to Source Voltage20V
Current - Continuous Drain(Id)5.5A;3.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))800mV
Pd - Power Dissipation1.15W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)22mΩ@10V;55mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)-
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel 20V 5.5A 1.15W Surface Mount TSOP-6

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