VBsemi Elec VB3222

VBsemi Elec · FETs & Power MOSFETs · MPN VB3222

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Specifications

Gate Charge(Qg)3.7nC@10V;1.8nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)55pF
Current - Continuous Drain(Id)6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation1.6W
Reverse Transfer Capacitance (Crss@Vds)26pF
RDS(on)22mΩ@4.5V;28mΩ@2.5V
Number2 N-Channel
Input Capacitance(Ciss)400pF
TypeN-Channel

Technical details

N-Channel Array 20V 6A 1.6W Surface Mount TSOP-6

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