VBsemi Elec VB1210

VBsemi Elec · FETs & Power MOSFETs · MPN VB1210

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Specifications

Gate Charge(Qg)15nC@10V
Drain to Source Voltage20V
Output Capacitance(Coss)305pF
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation3.5W
Reverse Transfer Capacitance (Crss@Vds)120pF
RDS(on)11mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)850pF
TypeN-Channel

Technical details

N-Channel 20V 9A 3.5W Surface Mount SOT-23(TO-236)

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