VBsemi Elec VB1204M

VBsemi Elec · FETs & Power MOSFETs · MPN VB1204M

No reviews yet — be the first to review VBsemi Elec VB1204M.

Specifications

Gate Charge(Qg)3nC@10V
Drain to Source Voltage200V
Current - Continuous Drain(Id)450mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V;4.5V
Pd - Power Dissipation1.03W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)1.4Ω@10V
Number1 N-channel
Input Capacitance(Ciss)-
TypeN-Channel

Technical details

N-Channel 200V 450mA 1.03W Surface Mount SOT-23(TO-236)

Related FETs & Power MOSFETs