VBsemi Elec UTM4052G-S08-R&30V-VB

VBsemi Elec · FETs & Power MOSFETs · MPN UTM4052G-S08-R&30V-VB

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)22nC@10V
Current - Continuous Drain(Id)8A
Output Capacitance(Coss)620pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation3.1W;3.2W
Reverse Transfer Capacitance (Crss@Vds)115pF
RDS(on)50mΩ@4.5V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)510pF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel Array 30V 8A 3.1W 3.2W Surface Mount SO-8

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