VBsemi Elec UT4413L-S08-R-VB

VBsemi Elec · FETs & Power MOSFETs · MPN UT4413L-S08-R-VB

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)27nC@4.5V
Output Capacitance(Coss)1.42nF
Current - Continuous Drain(Id)18A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation5.6W
Reverse Transfer Capacitance (Crss@Vds)70pF
RDS(on)5mΩ@10V;8mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)3.49nF
TypeP-Channel

Technical details

P-Channel 30V 18A 5.6W Surface Mount SO-8

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