VBsemi Elec · FETs & Power MOSFETs · MPN UT3N06L-AE3-R-VB
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 4.2nC@10V |
| Current - Continuous Drain(Id) | 4A |
| Output Capacitance(Coss) | 22pF |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 1.66W |
| RDS(on) | 75mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 13pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 180pF |
| Type | N-Channel |
N-Channel 60V 4A 1.66W Surface Mount SOT-23(TO-236)