VBsemi Elec · FETs & Power MOSFETs · MPN UT3409L-AE3-R-VB
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| Gate Charge(Qg) | 10nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 180pF |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 1.6W |
| RDS(on) | 80mΩ@2.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 155pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 835pF |
| Type | P-Channel |
20V 4A 1.5V 1.6W 80mΩ@2.5V 1 P-Channel P-Channel SOT-23 Single FETs, MOSFETs RoHS