VBsemi Elec · FETs & Power MOSFETs · MPN UT108N03L-TN3-R-VB
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| Gate Charge(Qg) | 151nC@10V;71.5nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 1.525nF |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V;2.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 770pF |
| RDS(on) | 2mΩ@10V;3mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.201nF |
| Type | N-Channel |
N-Channel 30V 100A Surface Mount TO-252