VBsemi Elec UM6301-VB

VBsemi Elec · FETs & Power MOSFETs · MPN UM6301-VB

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Specifications

Gate Charge(Qg)6nC;8nC
Drain to Source Voltage60V
Current - Continuous Drain(Id)5.3A;4.9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation3.4W
RDS(on)26mΩ@10V;55mΩ@10V
Number1 N-Channel + 1 P-Channel
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel 60V 5.3A 3.4W Surface Mount SO-8

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