VBsemi Elec TSM2N7002KDCU6 RF-VB

VBsemi Elec · FETs & Power MOSFETs · MPN TSM2N7002KDCU6 RF-VB

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Specifications

Gate Charge(Qg)600pC@4.5V
Drain to Source Voltage60V
Output Capacitance(Coss)6pF
Current - Continuous Drain(Id)350mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation350mW
Reverse Transfer Capacitance (Crss@Vds)2.5pF
RDS(on)1.8Ω@10V
Number2 N-Channel
Input Capacitance(Ciss)30pF
TypeN-Channel

Technical details

N-Channel Array 60V 350mA 0.35W Surface Mount SC70-6

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