VBsemi Elec · FETs & Power MOSFETs · MPN TPS1100DRG4-VB
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| Gate Charge(Qg) | 110nC@5V |
|---|---|
| Drain to Source Voltage | 12V |
| Current - Continuous Drain(Id) | 16A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 1.5W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 5mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | - |
| Vgs | ±8V |
| Type | P-Channel |
P-Channel 12V 16A 1.5W Surface Mount SO-8