VBsemi Elec · FETs & Power MOSFETs · MPN TPH1110ENH-VB
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| Output Capacitance(Coss) | 470pF |
|---|---|
| Pd - Power Dissipation | 136W |
| Gate Charge(Qg) | 48nC |
| Configuration | - |
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Reverse Transfer Capacitance (Crss@Vds) | 225pF |
| RDS(on) | 63mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.1nF |
136W 200V 2V 63mΩ@10V 1 N-channel N-Channel DFN-8(5x6) Single FETs, MOSFETs RoHS