VBsemi Elec · FETs & Power MOSFETs · MPN TPC8110-VB
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| Gate Charge(Qg) | 64nC@10V;53nC@4.5V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 335pF |
| Current - Continuous Drain(Id) | 16.1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 291pF |
| RDS(on) | 10mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 3.007nF |
| Type | P-Channel |
P-Channel 40V 16.1A Surface Mount SO-8