VBsemi Elec TPC8108-VB

VBsemi Elec · FETs & Power MOSFETs · MPN TPC8108-VB

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Specifications

Gate Charge(Qg)43nC@10V;22nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)380pF
Current - Continuous Drain(Id)11.6A
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)325pF
RDS(on)12.5mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.96nF
TypeP-Channel

Technical details

P-Channel 30V 11.6A Surface Mount SO-8

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