VBsemi Elec TPC8107&9-VB

VBsemi Elec · FETs & Power MOSFETs · MPN TPC8107&9-VB

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Specifications

Gate Charge(Qg)29.5nC@15V
Drain to Source Voltage30V
Output Capacitance(Coss)455pF
Current - Continuous Drain(Id)10.9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.4V
Pd - Power Dissipation2.7W
Reverse Transfer Capacitance (Crss@Vds)390pF
RDS(on)11mΩ@10V;15mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)2.55nF
TypeP-Channel

Technical details

P-Channel 30V 10.9A 2.7W Surface Mount SO-8

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