VBsemi Elec TPC8076-H-VB

VBsemi Elec · FETs & Power MOSFETs · MPN TPC8076-H-VB

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)6.8nC
Current - Continuous Drain(Id)18A
Output Capacitance(Coss)195pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation2.8W
RDS(on)5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)820pF
TypeN-Channel

Technical details

N-Channel 30V 18A 2.8W Surface Mount SO-8

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