VBsemi Elec TPC6111-VB

VBsemi Elec · FETs & Power MOSFETs · MPN TPC6111-VB

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)5.1nC@10V
Current - Continuous Drain(Id)4.8A
Output Capacitance(Coss)80pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation3W
RDS(on)54mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)63pF
Number1 P-Channel
Input Capacitance(Ciss)450pF
TypeP-Channel

Technical details

P-Channel 30V 4.8A 3W Surface Mount TSOP-6

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