VBsemi Elec TK8S06K3L-VB

VBsemi Elec · FETs & Power MOSFETs · MPN TK8S06K3L-VB

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Specifications

Gate Charge(Qg)19.8nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)85pF
Current - Continuous Drain(Id)18A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation41.7W
Reverse Transfer Capacitance (Crss@Vds)40pF
RDS(on)73mΩ@10V;85mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)660pF
TypeN-Channel

Technical details

N-Channel 60V 18A 41.7W Surface Mount TO-252

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