VBsemi Elec · FETs & Power MOSFETs · MPN TK3R2A10PL-VB
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| Gate Charge(Qg) | 190nC@10V |
|---|---|
| Configuration | - |
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 120A |
| Output Capacitance(Coss) | 3.84nF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 84W |
| Reverse Transfer Capacitance (Crss@Vds) | 385pF |
| RDS(on) | 8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.23nF |
N-Channel 100V 120A 84W Through Hole TO-220F