VBsemi Elec · FETs & Power MOSFETs · MPN TK30E06N1-VB
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| Gate Charge(Qg) | 47nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 60A |
| Output Capacitance(Coss) | 570pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.9V |
| Pd - Power Dissipation | 136W |
| Reverse Transfer Capacitance (Crss@Vds) | 325pF |
| RDS(on) | 11mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.2nF |
| Type | N-Channel |
N-Channel 60V 60A 136W Through Hole TO-220AB