VBsemi Elec · FETs & Power MOSFETs · MPN TK100E08N1-VB
No reviews yet — be the first to review VBsemi Elec TK100E08N1-VB.
| Drain to Source Voltage | 80V |
|---|---|
| Gate Charge(Qg) | 94nC@10V |
| Current - Continuous Drain(Id) | 195A |
| Output Capacitance(Coss) | 3.25nF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 375W |
| Reverse Transfer Capacitance (Crss@Vds) | 348pF |
| RDS(on) | 2.8mΩ@10V;3mΩ@7.5V |
| Input Capacitance(Ciss) | 7.91nF |
| Type | N-Channel |
N-Channel 80V 195A 375W Through Hole TO-220AB