VBsemi Elec · FETs & Power MOSFETs · MPN SUP85N03-3M6P-GE3-VB
No reviews yet — be the first to review VBsemi Elec SUP85N03-3M6P-GE3-VB.
| Gate Charge(Qg) | 81.5nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 725pF |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 175W |
| Reverse Transfer Capacitance (Crss@Vds) | 370pF |
| RDS(on) | 3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.1nF |
| Vgs | ±20V |
N-Channel 30V 120A 175W Through Hole TO-220AB