VBsemi Elec SUM110P06-08L-E3-VB

VBsemi Elec · FETs & Power MOSFETs · MPN SUM110P06-08L-E3-VB

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Specifications

Gate Charge(Qg)345nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)1.2nF
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation3.75W
Reverse Transfer Capacitance (Crss@Vds)900pF
RDS(on)5mΩ@10V
Number1 P-Channel
TypeP-Channel

Technical details

P-Channel 60V 120A 3.75W Surface Mount TO-263(D2Pak)

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