VBsemi Elec · FETs & Power MOSFETs · MPN SUG90090E-GE3-VB
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| Drain to Source Voltage | 200V |
|---|---|
| Gate Charge(Qg) | 96nC@10V |
| Current - Continuous Drain(Id) | 110A |
| Output Capacitance(Coss) | 246pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 110W |
| Reverse Transfer Capacitance (Crss@Vds) | 21pF |
| RDS(on) | 10mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.8nF |
| Type | N-Channel |
N-Channel 200V 110A 110W Through Hole TO-247