VBsemi Elec SUD50P08-25L-E3-VB

VBsemi Elec · FETs & Power MOSFETs · MPN SUD50P08-25L-E3-VB

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Specifications

Gate Charge(Qg)55nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)320pF
Current - Continuous Drain(Id)12.5A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation95W
Reverse Transfer Capacitance (Crss@Vds)235pF
RDS(on)17mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)4.7nF
TypeP-Channel

Technical details

P-Channel 100V 12.5A 95W Surface Mount TO-252

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