VBsemi Elec · FETs & Power MOSFETs · MPN SUD50N10-34P-E3-VB
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| Gate Charge(Qg) | 38nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 9.2A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 3W |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.4nF |
N-Channel 100V 9.2A 3W Surface Mount TO-252