VBsemi Elec · FETs & Power MOSFETs · MPN SUB85N08-08-GE3-VB
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| Drain to Source Voltage | 80V |
|---|---|
| Gate Charge(Qg) | 53.5nC@10V |
| Current - Continuous Drain(Id) | 120A |
| Output Capacitance(Coss) | 1.395nF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 370W |
| Reverse Transfer Capacitance (Crss@Vds) | 95pF |
| RDS(on) | 6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.33nF |
| Type | N-Channel |
N-Channel 80V 120A 370W Surface Mount TO-263(D2PAK)