VBsemi Elec · FETs & Power MOSFETs · MPN SUB85N03-07P-VB
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| Gate Charge(Qg) | 81.5nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 28.8A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 3.75W |
| Reverse Transfer Capacitance (Crss@Vds) | 970pF |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 12.065nF |
N-Channel 30V 28.8A 3.75W Surface Mount TO-263(D2Pak)