VBsemi Elec · FETs & Power MOSFETs · MPN SUB85N03-04P-GE3-VB
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| Gate Charge(Qg) | 82nC |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 98A |
| Output Capacitance(Coss) | 1.725nF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 250W |
| Reverse Transfer Capacitance (Crss@Vds) | 970pF |
| RDS(on) | 2.7mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 12.065nF |
| Type | N-Channel |
N-Channel 30V 98A 250W Surface Mount TO-263(D2Pak)