VBsemi Elec STY140NS10-VB

VBsemi Elec · FETs & Power MOSFETs · MPN STY140NS10-VB

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Specifications

Gate Charge(Qg)110nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)750pF
Current - Continuous Drain(Id)150A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation375W
Reverse Transfer Capacitance (Crss@Vds)280pF
RDS(on)6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.7nF
TypeN-Channel

Technical details

100V 150A 4V 375W 6mΩ@10V 1 N-channel N-Channel TO-247AC Single FETs, MOSFETs RoHS

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