VBsemi Elec STW120NF10-VB

VBsemi Elec · FETs & Power MOSFETs · MPN STW120NF10-VB

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Specifications

Gate Charge(Qg)110nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)750pF
Current - Continuous Drain(Id)150A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation3.75W
Reverse Transfer Capacitance (Crss@Vds)280pF
RDS(on)6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.7nF
TypeN-Channel

Technical details

N-Channel 100V 150A 3.75W Through Hole TO-247AC

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