VBsemi Elec · FETs & Power MOSFETs · MPN STU411D-VB
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| Gate Charge(Qg) | 420nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 50A |
| Output Capacitance(Coss) | 550pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 108W |
| Reverse Transfer Capacitance (Crss@Vds) | 360pF |
| RDS(on) | 14mΩ@10V |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 3.5nF |
| Type | N-Channel + P-Channel |
N-Channel+P-Channel Array 40V 50A 108W Surface Mount TO-252-4L