VBsemi Elec STU314D-VB

VBsemi Elec · FETs & Power MOSFETs · MPN STU314D-VB

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Specifications

Configuration-
Drain to Source Voltage60V
Gate Charge(Qg)9nC@4.5V;10nC@4.5V
Output Capacitance(Coss)84pF
Current - Continuous Drain(Id)35A;19A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation50W
RDS(on)30mΩ@10V;50mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)79pF;60pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)1.5nF;1.18nF

Technical details

N-Channel+P-Channel Array 60V 35A 19A 50W Surface Mount TO-252-4L

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