VBsemi Elec · FETs & Power MOSFETs · MPN STU312D-VB
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| Drain to Source Voltage | 40V |
|---|---|
| Gate Charge(Qg) | 310nC@10V;420nC@10V |
| Output Capacitance(Coss) | 282pF;320pF |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 108W |
| RDS(on) | 14mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 109pF;220pF |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 1.799nF;2nF |
| Type | N-Channel + P-Channel |
N-Channel+P-Channel 40V 50A 108W Surface Mount TO-252-4L