VBsemi Elec STS8DN3LLH5-VB

VBsemi Elec · FETs & Power MOSFETs · MPN STS8DN3LLH5-VB

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Specifications

Gate Charge(Qg)15nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)175pF
Current - Continuous Drain(Id)13.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Reverse Transfer Capacitance (Crss@Vds)73pF
RDS(on)10mΩ@10V
Number2 N-Channel
Input Capacitance(Ciss)641pF
TypeN-Channel

Technical details

N-Channel Array 30V 13.5A Surface Mount SO-8

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