VBsemi Elec STS4NF100-VB

VBsemi Elec · FETs & Power MOSFETs · MPN STS4NF100-VB

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Specifications

Gate Charge(Qg)43nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)150pF
Current - Continuous Drain(Id)6.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation14W
Reverse Transfer Capacitance (Crss@Vds)50pF
RDS(on)40mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.9nF
TypeN-Channel

Technical details

N-Channel 100V 6.4A 14W Surface Mount SO-8

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