VBsemi Elec · FETs & Power MOSFETs · MPN STS4C3F60L-VB
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 6nC@10V;8nC@10V |
| Output Capacitance(Coss) | 75pF;95pF |
| Current - Continuous Drain(Id) | 5.3A;4.9A |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 3.1W;3.4W |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF;60pF |
| RDS(on) | 26mΩ@10V;55mΩ@10V |
| Input Capacitance(Ciss) | 665pF;650pF |
| Type | N-Channel + P-Channel |
60V 1V N-Channel + P-Channel SO-8 Single FETs, MOSFETs RoHS